山口大学大学院創成科学研究科只友・岡田研究室

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論文リスト

Year 2019

  1. N. Okada, Y. Inomata, H. Ikeuchi, S. Fujimoto, H. Itakura, S. Nakashima, R. Kawamura, and K. Tadatomo “Characterization of high-quality relaxed flat InGaN template fabricated by combination of epitaxial lateral overgrowth and chemical mechanical polishing” Journal of Crystal Growth 512, 147 (2019)

Year 2018

  1. T. Matsubara, N. Okada, and K. Tadatomo “Mechanism for the formation of nitrogen-filled voids after annealing of GaN on a sapphire substrate” Journal of Applied Physics 124, 045304 (2018)
  2. Kohei Sugimoto, Narihito Okada, Satoshi Kurai, Yoichi Yamada, and Kazuyuki Tadatomo “Separation of effects of InGaN/GaN superlattice on performance of light-emitting diodes using mid-temperature-grown GaN layer” Japanese Journal of Applied Physics 57, 062101 (2018)
  3. Satoshi Kurai, Kohei Okawa, Ryoga Makio, Genki Nobata, Junji Gao, Kohei Sugimoto, Narihito Okada, Kazuyuki
  4. Tadatomo, and Yoichi Yamada “Nanoscopic spectroscopy of potential barriers formed around V-pits in InGaN/GaN multiple quantum wells on moderate temperature GaN pit expansion layers” Journal of Applied Physics 124, 083107 (2018)
  5. Masafumi Jo, Naoki Morishita, Narihito Okada, Yuri Itokazu, Norihiko Kamata, Kazuyuki Tadatomo, and
  6. Hideki Hirayama “Impact of thermal treatment on the growth of semipolar AlN on m-plane sapphire” AIP Advances 8, 105312 (2018)

Year 2017

  1. K. Sugimoto, T. Nishihira, N. Arita, Y. Dempo, N. Okada, and K. Tadatomo “Characterization of high electron mobility transistor fabricated on hydride vapor phase epitaxy-grown GaN templates containing various Fe concentrations” Physica Status Solidi (c) 1600246, 1 (2017)
  2. Tohoru Matsubara, Yusho Denpo, Narihito Okada, and Kazuyuki Tadatomo “V-shaped pits in HVPE-grown GaN associated with columnarinversion domains originating from foreign particles of α-Si3N4 and graphitic carbon” Micron 94, 9 (2017)
  3. N. Okada, N. Morishita, A. Mori, T. Tsukada, K. Tateishi, K. Okamoto, and K. Tadatomo “Fabrication and evaluation of plasmonic light-emitting diodes with thin p-type layer and localized Ag particles embedded by ITO” Journal of Applied Physics 121, 153102 (2017)
  4. Tohoru Matsubara, Kohei Sugimoto, Shin Goubara, Ryo Inomoto, Narihito Okada, and Kazuyuki Tadatomo “Direct observation of inclined a-type threading dislocation with a-type screw dislocation in GaN” Journal of Applied Physics 121, 185101 (2017)
  5. K. Okamoto, M. Funato, Y. Kawakami, N. Okada, K. Tadatomo, and K. Tamada “Plasmonics toward high efficiency LEDs from the visible to the deep UV region” Proceedings of SPIE 10124, 101240R-1 (2017)
  6. Y. Yao, Y. Ishikawa, Y. Sugawara, D. Yokoe, M. Sudo, N. Okada, and K. Tadatomo “Dislocation Revolation and Categorization for Thick Free-Standing GaN Substrates Grown by HVPE” Materials Science Forum 897, 707 (2017)
  7. Tohoru Matsubara, Shin Goubara, Kota Yukizane, Ryo Inomoto, Narihito Okada, and Kazuyuki Tadatomo “Visualization of dislocation behavior in HVPE-grown GaN using facet controlling techniques” Physica Status Solidi (b) 1600716, (2017)
  8. N. Okada, K. Nojima, N. Ishibashi, K. Nagatoshi, N. Itagaki, R. Inomoto, S. Motoyama, T. Kobayashi, and K. Tadatomo “Formation of distinctive structures of GaN by inductively-coupled-plasma and reactive ion etching under optimized chemical etching conditions” AIP Advances 7, 65111 (2017)
  9. Shin Goubara, Tohoru Matsubara, Kota Yukizane, Naoki Arita, Satoru Fujimoto, Tatsuya Ezaki, Ryo Inomoto, Keisuke Yamane, Narihito Okada, and Kazuyuki Tadatomo “Bulk GaN substrate with overall dislocation density on the order of 105/cm2 fabricated by hydride vapor phase epitaxy” Journal of Crystal Growth 478, 123 (2017)

Year 2016

  1. Y. Hashimoto, K. Yamane, N. Okada, and K. Tadatomo “Growth of Semipolar {20-21} GaN and {20-2-1} GaN for GaN substrate” Physica Status Solidi (b) 253, 36 (2016)
  2. K. Yamane, T. Matsubara, T. Yamamoto, N. Okada, A. Wakahara, and K. Tadatomo “Origin of lattice bowing of freestanding GaN substrates grown by hydride vapor phase epitaxy” Journal of Applied Physics 119, 045707 (2016)
  3. N. Okada, H. Ihara, K. Yamane, and K. Tadatomo “Alternately double-sided growth of low-curvature GaN templates on sapphire substrates using hydride vapor phase epitaxy” Physica Status Solidi (b) 5, 819 (2016)
  4. K. Sugimoto, N. Okada, and K. Tadatomo “Effect of superlattice on light output power InGaN-based light-emitting diodes fabricated on underlying GaN substrates with different dislocation densities” Physica Status Solidi (c) 13, 270 (2016)
  5. T. Matsubara, K. Sugimoto, N. Okada, and K. Tadatomo “Atomic-scale investigation of structural defects in GaN layer on c-plane sapphire substrate during initial growth stage” Japanese Journal of Applied Physics 55, 045501 (2016)
  6. T. Uchiyama, S. Takeuchi, S. Kamada, T. Arauchi, Y. Hashimoto, K. Yamane, N. Okada, Y. Imai, S. Kimura, K. Tadatomo, and A. Sakai “Positional dependence of defect distribution in semipolar (20-21) HVPE-GaN films grown on (22-43) patterned sapphire substrates” Japanese Journal of Applied Physics 55, 05FA07 (2016)
  7. N. Okada, Y. Okamura, K.Uchida, and K. Tadatomo “Controlling optical polarization of {11-22} semipolar multiple quantum wells using relaxed underlying InGaN buffer layers” Optical Materials 58, 243 (2016)
  8. Y. Yao, Y. Ishikawa, Y. Sugawara, D. Yokoe, M. Sudo, N. Okada, and K. Tadatomo “Revelation of dislocations in HVPE GaN single crystal by KOH etching with Na2O2 additive and cathodoluminescence mapping” SL material 99, 83 (2016)

Year 2015

  1. N. Okada, H. Kashihara, K. Sugimoto, Y. Yamada, and K.Tadatomo “Controlling potential barrier height by changing V-shaped pit size and the effect on optical and electrical properties for InGaN/GaN based light-emitting diodes” Journal of Applied Physics 117, 025708 (2015)
  2. S. Takeuchi, T. Uchiyama, T. Arauchi1, Y. Hashimoto, Y. Nakamura, K. Yamane, N. Okada, K. Tadatomo, and A. Sakai “Thickness and growth condition dependence of crystallinity in semipolar (20–21) GaN films grown on (22–43) patterned sapphire substrates” Physica Status Solidi (b) 252, 1142 (2015)
  3. T. Arauchi, S. Takeuchi, Y. Hashimoto, Y. Nakamura, K. Yamane, N. Okada, Y. Imai, S. Kimura, K. Tadatomo, and A. Sakai “Crystalline property analysis of　semipolar (20–21) GaN on (22–43)　patterned sapphire substrate by X-ray microdiffraction and transmission　electron microscopy” Physica Status Solidi (b) 252, 1149 (2015)

Year 2014

  1. K. Nakao, M. Haziq, Y. Okamura, K. Yamane, N. Okada, and K. Tadatomo “Characterization of semipolar {11-22} light-emitting diodes using a hole blocking layer” Physica Status Solidi (c) 11, 775 (2014)
  2. M. Ueno, Y. Hashimoto, K. Yamane, N. Okada, and K. Tadatomo “Growth of semipolar {11-22} GaN using SiNx intermediate layer by hydride vapor phase epitaxy” Physica Status Solidi (c) 11, 557 (2014)
  3. K. Yamane, Y. Hashimoto, H. Furuya, T. Inagaki, N. Okada, and K. Tadatomo “Fabrication of freestanding {20-21} GaN substrates by HVPE using SiO2 masked GaN templates” Physica Status Solidi (c) 11, 401 (2014)
  4. N. Okada, A. Ishikawa, K. Yamane, K. Tadatomo, U. Jahn, and H. T. Grahn “Generation of dislocation clusters by glide m-planes in semipolar GaN layers” Physica Status Solidi (a) 211, 736 (2014)
  5. K. Yamane, Y. Hashimoto, N. Okada, and K. Tadatomo “Improved utilization efficiency of Gas source and flatness of GaN layer by pulsed-GaCl flow modulation on hydride vapor phase epitaxy” Journal of Crystal Growth 403, 55 (2014)
  6. K. Yamane, T. Inagaki, Y. Hashimoto, M. Koyama, N. Okada, and K. Tadatomo “Characterization of Structural Defects in Semipolar {20-21} GaN Layers Grown on {22-43} Patterned Sapphire Substrates” Japanese Journal of Applied Physics 53, 035502 (2014)
  7. Y. Hashimoto, M. Koyama, T. Inagaki, K. Yamane, N. Okada, and K. Tadatomo “Evaluation of Heteroepitaxially Grown Semipolar {20-21} GaN on Patterned Sapphire substrates” Lecture Notes in Electrical Engineering 306, 23 (2014)
  8. Yasuhiro Hashimoto, Hiroshi Furuya, Motohisa Ueno, Keisuke Yamane, Narihito Okada, and Kazuyuki Tadatomo “Epitaxial lateral overgrowth of thick semipolar {11-22} GaN by hydride vapor phase epitaxy” Physica Status Solidi (c) 11, 549 (2014)

Year 2013

  1. K. Yamane, N. Okada, H. Furuya, K. Tadatomo, “Semipolar GaN growth on patterned sapphire substrates by hydride vapor phase epitaxy”, Invited paper, Proc. SPIE 8625 (2013) 862503-1. (7 pages)
  2. K. Uchida, S. Miyoshi1, K. Yamane, N. Okada, K. Tadatomo, and N. Kuwano “Evaluation of {11-22} Semipolar Multiple Quantum Wells Using Relaxed Thick InGaN Layers with Various In Compositions” Jpn. J. Appl. Phys. 52 (2013) 08JC07. (3 pages) (Proc.)
  3. H. Furuya, K. Yamane, N. Okada, and K. Tadatomo “Self-separated large freestanding semipolar {11-22} GaN films using r-plane patterned sapphire substrates” Jpn. J. Appl. Phys. 52 (2013) 08JA09. (4 pages) (Proc.)
  4. N. Okada, M. Takami, Y. Yamada, and K. Tadatomo “Fabrication and Evaluation of GaN Layer Composed of m- and {10-11} Fecet Structure” Jpn. J. Appl. Phys., 52, 01AF06, 2013(Proc.)

Year 2012

  1. K. Yamane, M. Ueno, K. Uchida, H. Furuya, N. Okada, and K. Tadatomo “Reduction in Dislocation Density of Semipolar GaN Layers on Patterned Sapphire Substrates by Hydride Vapor Phase Epitaxy” Appl. Phys. Express, 5, 095503, 2012
  2. K. Yamane, M. Ueno, H. Furuya, N. Okada, K. Tadatomo “Successful natural stress-induced separation of hydride vapor phase epitaxy-grown GaN layers on sapphire substrates” J. Cryst. Growth, Vol.358, page1-4, 2012.
  3. A. Uchida, S. Miyoshi, K. Yamane, N. Okada, and K. Tadatomo “Improved External Quantum Efficiency and Controlled Light Distribution for Light-Emitting Diodes with Cone Array Composed of SiOxNy” Appl. Phys. Express, 5, 092102, 2012
  4. N. Okada, Y. Yamada, and K. Tadatomo “Structural and optical evaluation of InGaN/GaN multi-quantum wells on template consisting of in-plane alternately arranged relaxed InGaN and GaN” J. Appl. Phys., 111, 043508, 2012
  5. Takaaki Kuwahara, Noriyuki Kuwano, Akihiko Kurisu, Narihito Okada, and Kazuyuki Tadatomo “Behavior of misfit dislocations in semipolar InGaN/GaN grown by MOVPE” Phys. Stat. Solidi (c) ,9, 488, 2012
  6. Narihito Okada, Katsumi Uchida, Seita Miyoshi, and Kazuyuki Tadatomo “Green light-emitting diodes fabricated on semipolar (11-22) GaN on r-plane patterned sapphire substrate” Phys. Stat. Solidi (a) , 209, 469, 2012
  7. H. Furuya, N. Okada, and K. Tadatomo “Growth of {11-22} GaN on shallowly etched r-plane patterned sapphire substrates” Phys. Stat. Solidi (c) , 9, No. 3-4, 568-571, 2012

Year 2011

  1. N. Okada, H. Oshita, K. Yamane and K. Tadatomo “High-quality {20-21} GaN layers on patterned sapphire substrate with wide-terrace” Appl. Phys. Lett., 99, 242103, 2011
  2. N. Okada, H. Oshita, A. Kurisu, and K. Tadatomo “Growth Mechanism of Nonpolar and Semipolar GaN Layers from Sapphire Sidewalls on Various Maskless Patterned Sapphire Substrates” Jpn. J. Appl. Phys., 50, 035602, 2011
  3. M. Takami, A. Kurisu, Y. Abe, N. Okada, and K. Tadatomo, “Growth of semipolar {10-11} GaN from c-plane-like sapphire sidewall of patterned n-plane sapphire substrate” Phys. Status Solidi (c), 8, pp.2101-2103, 2011
  4. K. Tadatomo, N. Okada “Development of patterned sapphire substrate and the application to the growth of non-polar and semi-polar GaN for light-emitting diodes” Proceedings of SPIE Vol.7954, pp.795416-1-10, 2011

Year 2010

  1. Y. Kawashima, K. Murakami, Y. Abe, N. Okada, and K. Tadatomo, “Growth mechanism of nonpolar m-plane GaN on maskless patterned a-plane sapphire substrate” Phys. Stat. Solidi (c), 7, pp.2066-2068, 2010
  2. T. Shinagawa, Y. Abe, H. Matsumoto, B. C. Li, K. Murakami, N. Okada, K. Tadatomo, M. Kannaka, and H. Fujii “Light-emitting diodes fabricated on nanopatterned sapphire substrates by thermal lithography” Phys. Stat. Solidi (c), 7, pp. 2065-2067, 2010
  3. D. Fujita, T. Miyatake, T. Shinagawa, Y. Abe, K. Murakami, B. C. Li, H. Matsumoto, S. Murayama, N. Okada, and K. Tadatomo, “Evaluation of multiple-quantum-well structure on InGaN template using (112¯2) facet growth and mass transport” Phys. Stat. Solidi (c), 7, pp.2063-2065, 2010

Year 2009

  1. N. Okada, T. Murata, K. Tadatomo, H. C. Chang, and K. Watanabe “Growth of GaN layer and Characterization of Light-Emitting Diode Using Random-Cone Patterned Sapphire Substrate” Japanese Journal of Applied Physics, 48, 122103, 2009.
  2. N. Okada, H. Kurisu, and K. Tadatomo, “Growth of Semipolar (11¯2) GaN Layer by Controlling Anisotropic Growth Rates in r-Plane Patterned Sapphire Substrate” Appl. Phys. Express, 2, 091001, 2009.
  3. N. Okada , F. Ishida, Y. Mitsui, K. Tadatomo, H. Mangyo,　Y. Kobayashi, H. Ono, K. Ikenaga, Y. Yano, and K. Matsumoto, “Evaluation of Performance of InGaN/GaN Light-Emitting Diodes Fabricated Using NH3 with Intentionally Added H2O” Japanese Journal of Applied Physics, 48, 062102, 2009.
  4. H. Murotani, Takahiro Kuronaka, Y. Yamada, T. Taguchi, N. Okada, and H. Amano, “Temperature dependence of excitonic transitions in a-plane AlN epitaxial layers” Journal of Applied Physics, 105, 083533, 2009.
  5. N. Okada, Y. Kawashima, and K. Tadatomo, “Growth of m-GaN layers by epitaxial lateral overgrowth from sapphire sidewalls” physica status solidi(a), 206 No. 6, pp.1164-1167, (2009)

Year 2008

  1. N. Okada, Y. Kawashima, and K. Tadatomo, “Direct Growth of m-plane GaN with Epitaxial Lateral Overgrowth from c-plane Sidewall of Sapphire” Appl. Phys. Express, 1, 111101, 2008
  2. Y. Yamada, K. Choi, S. Shin, H. Murotani, T. Taguchi, N. Okada, and H. Amano, “Photoluminescence from highly excited AlN epitaxial layers” Applied Physics Letter, 92, 131912, 2008.
  3. M. Araki, N. Mochimizo, K. Hoshino, and K. Tadatomo “Effect of Misorientation Angle of r-Plane Sapphire Substrate on a-Plane GaN Grown by Metalorganic Vapor Phase Epitaxy” 47, 119, 2008.
  4. T. Ishiguro, Y. Toda, S. Adachi, K. Tadatomo, K. Hoshino, “Four-wave-mixing study of exciton fine structure in GaN” Physica Status Solidi (C) Current Topics in Solid State Physics 6 (1), pp. 42-45(2008)
  5. Y. Toda, T. Ishiguro, S. Adachi, K. Hoshino, K. Tadatomo, “Highly sensitive optical probe for uniaxial strain in GaN epitaxial films” Physica Status Solidi (B) Basic Research 245 (5), pp. 878-880(2008)

Year 2007

  1. M. Araki, N. Mochimizo, K. Hoshino, and K. Tadatomo, “Direct Growth of a-Plane GaN on r-Plane Sapphire Substrate by Metalorganic Vaper Phase Epitaxy”, Japanese Journal of Applied Physics, 46, 555, 2007.
  2. K. Yamaguchi, Y. Toda, T. Ishiguro, S. Adachi, K Hoshino, K. Tadatomo, K. “Time-resolved four-wave mixing studies of excitons in GaN” Physica Status Solidi (C) Current Topics in Solid State Physics 4 (7), pp. 2752-2755(2007)
  3. M. Araki, K. Hoshino, K. Tadatomo, “Direct growth of a-plane GaN on r-plane sapphire substrate by metalorganic vapor phase epitaxy” Physica Status Solidi (C) Current Topics in Solid State Physics 4 (7), pp. 2540-2543(2007)
  4. K. Hoshino, N. Yanagita, M. Araki, K Tadatomo, “Effect of low-temperature GaN buffer layer on the crystalline quality of subsequent GaN layers grown by MOVPE” Journal of Crystal Growth 298 (SPEC. ISS), pp. 232-234(2007)

Year 2006

  1. K. Tadatomo, O. Shimoike, H. Noda, M. Hiraoka, K. Yoshimura, K. Hoshino, “Comparison between the photoluminescence mappings under selective and non-selective excitation and the electroluminescence mappings of the epitaxial wafers with InGaN-LED structure” Materials Research Society Symposium Proceedings 955, pp. 229-234(2006)
  2. H. Yanai, K. Okita, K. Kikuchi, K. Tadatomo, H. Nakamura, J. Nishikawa, T. Yoshida, T. Taguchi, “Preliminary experience with a gastrointestinal endoscope using a white light-emitting diode” Endoscopy 38 (3), pp. 290-291(2006)