ABOUT
"We dedicate ourselves to the pursuit of innovation in the field of optoelectronics, specifically focusing on the captivating realms of light-emitting diodes (LEDs) and lasers (LDs). Our passion lies in harnessing the power of group III nitride semiconductors, such as GaN, to create remarkable devices that emit light spanning from red to ultraviolet. At our research facility, we foster an environment where scientific curiosity thrives, offering a platform for comprehensive exploration. From meticulously evaluating the cutting-edge optical properties to envisioning groundbreaking device applications, we invite you to immerse yourself in a world of systematic inquiry. Moreover, we strive to push the boundaries of technological advancements by delving into the realm of high electron mobility transistors (HEMTs), which empower ultrafast operations. With GaN and AlN substrates as our foundations, we pave the way for unprecedented possibilities. Embark on a journey with us, where scientific discovery unfolds, and your ideas can shape the future of optoelectronics. Join our vibrant community of researchers as we pave the path towards a brighter, more illuminating world.
EVENT
- 2019/04/05
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新4年生歓迎パーティ
- 2019/03/20
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卒業記念写真撮影会
- 2019/03/09-12
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- 応用物理学会参加
- M2池内君、M1磯野君、B4新宮が口頭発表
- 岡田准教授がAPEX/JJAP編集貢献賞を受賞
- 2019/03/04
- M2追い出しコンパ