山口大学大学院創成科学研究科只友・岡田研究室

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国際会議

2017年

  1. Narihito Okada, Kohei Nojima, Naoto Ishibashi, Kei Nagatoshi, Norihiro Itagaki, Ryo Inomoto, Shinichi Motoyama, Takayuki Kobayashi, and Kazuyuki Tadatomo “Fabrication of idiosyncratic GaN structures by ICP-RIE with enhanced chemical etching conditions and its applications” The 5th International Conference on Light-Emitting Devices and Their Industrial Applications (LEDIA`17), LED7-6, 2017.4.19-21, Pacifico Yokohama, Yokohama, Japan(Oral)
  2. Narihito Okada, Keisuke Yamane, Tohoru Matsubara, Shin Goubara, Hiroshi Ihara, Kota Yukizane, Tatsuya Ezak1i, Satoru Fujimoto, Ryo Inomoto, Kazuyuki Tadatomo “HVPE-grown GaN substrate with overall low dislocation density and relation between lattice bowing and defects” 12th International Conference on Nitride Semiconductors (ICNS-12), A 1.1, 2017.7.23-28, Strasbourg Convention and Exhibition Centre, Strasbourg, France(Oral)
  3. Narihito Okada, Hiroki Ikeuchi, Naoki Morishita, Tohoru Matsubara, Tomoyuki Tanikawa, Kim DoHun, Masayuki Imanishi, Mamoru Imade, Yusuke Mori, Kazuyuki Tadatomo “Evaluation of stacking faults free semipolar {11-22} GaN substrate grown by Na-flux point seed technique” 12th International Conference on Nitride Semiconductors (ICNS-12), A 4.2, 2017.7.23-28, Strasbourg Convention and Exhibition Centre, Strasbourg, France(Oral)
  4. Satoshi Kurai, Shota Higaki, Narihito Okada, Kazuyuki Tadatomo, Yoichi Yamada “Potential Barrier formed around Dislocations in InGaN Quantum Well Structures by Spot Cathodoluminescence Measurements” 12th International Conference on Nitride Semiconductors (ICNS-12), A 1.26, 2017.7.23-28, Strasbourg Convention and Exhibition Centre, Strasbourg, France(Poster)
  5. Satoshi Kurai, Renma Mihara, Genki Nobata, Kohei Okawa, Narihito Okada, Kazuyuki Tadatomo, Yoshiki Yano, Toshiya Tabuchi, Koh Matsumoto, Yoichi Yamada “Spatial Resolved Spectroscopy of Blue and Green InGaN Quantum Wells by Scanning Near-Field Opitcal Microscopy” 12th International Conference on Nitride Semiconductors (ICNS-12), A 1.27, 2017.7.23-28, Strasbourg Convention and Exhibition Centre, Strasbourg, France(Poster)
  6. Tohoru Matsubara, Kota Yukizane, Naoki Arita, Tatsuya Ezaki, Satoru Fujimoto, Tomoyuki Tanikawa, Ryo Inomoto, Narihito Okada, Kazuyuki Tadatomo
  7. “Dislocation behavior in HVPE-grown GaN using facet-controlling and flattening growth technique” 29th International Conference on Defects in Semiconductors, , 2017.7.31-8.4, Kunibiki Messe, Matsue, Japan(Poster)
  8. K. Sugimoto, A. Mori, N. Okada, and K. Tadatomo “Effect of AlGaN/GaN superlattice on the characteristic of GaN layers grown on GaN underlying layers containing various impurities” 29th International Conference on Defects in Semiconductors, , 2017.7.31-8.4, Kunibiki Messe, Matsue, Japan(Poster)
  9. N. Okada, and K. Tadatomo “Recent progress of HVPE-grown GaN substrate” Workshop on Ultra-Precision Processing for Wide Bandgap Semiconductors (WUPP2017), , 2017.11.5-7, Sanctuary Beach Resort, USA(Oral)

2016年

  1. K. Okamoto, K. Tateishi, K. Tamada, T. Tsukada, N. Okada, and K. Tadatomo “Efficient InGaN-based Plasmonic Light-Emitting Diodes with Thin p-type Layers” The 10th Asia-Pacific Conference on Near-field Optics (APNFO10), Wed Session1 Cont1-1, 2016.7.8-10, Hakodate Research Center for Fisheries and Oceans, Hokkaido, Hakodate City, Japan(Oral)
  2. Y. Yao, Y. Ishikawa, Y. Sugawara, D. Yokoe, M. Sudo, N. Okada, K.Tadatomo “Dislocation revelation and categorization for thick free-standing GaN substrates grown by HVPE” The European Conference on Silicon Carbide and Related Materials 2016, WeP.13, 2016.9.23-29, Porto Carras Grand Resort, Greece(Poster)
  3. S. Goubara, K. Yukizane, N. Arita, T. Matsubara, K. Yamane, R. Inomoto, N. Okada, and K Tadatomo “Bulk GaN Substrate with Overall Dislocation Density in the Order of 104 – 105/cm2 by Hydride Vapor Phase Epitaxy” International Workshop on Nitride Semiconductors (IWN 2016), A1.1.03, 2016.10.2-7, Orlando, Florida, USA(Oral)
  4. K. Sugimoto, T. Nishihira, N. Arita, Y. Denpo, N. Okada and K. Tadatomo “Characterization of HEMT Fabricated on HVPE-Grown GaN Templates with Various Fe Concentrations” International Workshop on Nitride Semiconductors (IWN 2016), PS2.84, 2016.10.2-7, Orlando, Florida, USA(Poster)
  5. T. Matsubara, S. Goubara, K. Yukizane, R. Inomoto, N. Okada, and K. Tadatomo “Visualization of Dislocation Behavior in HVPE-Grown GaN Using Facet Controlling Technique” International Workshop on Nitride Semiconductors (IWN 2016), A2.10.06, 2016.10.2-7, Orlando, Florida, USA(Oral)

2015年

  1. N. Okada, T. Tsukada, K. Tadatomo, and K. Okamoto “Plasmonic Light-Emitting Diodes with Thin p-Type Layer and Localized-Ag Layer Embedded by ITO” The 3rd International Conference on Light-Emitting Devices and Their Industrial Applications (LEDIA'15), LEDp2-37, 2015.4.22-24, Pacifico Yokohama, Yokohama, Japan(Oral)
  2. K. Sugimoto, N. Okada, and K. Tadatomo “InGaN-based light-emitting diodes with pit expansion layers composed of only SL or middle-temperature-grown GaN layer” The 7th Asia-Pacific workshop on Widegap Semiconductors (APWS 2015), TUA3-5, 2015.5.17-20, The K Seoul Hotel, Seoul, Korea(Oral)
  3. T. Matsubara, K. Sugimoto, N. Okada, and K. Tadatomo “Transmission electron microscopy study on the origin of threading dislocations in GaN layer on patterned sapphire substrate” 2015 JSME-IIP/ASME-ISPS Joint Conference on Micromechatronics for Information and Precision Equipment (MIPE 2015), WeC-2-1, 2015.6.14-17, Kobe Convention center, Kobe, Hyogo, Japan(Oral)
  4. K. Tadatomo, N. Okada, and K. Yamane “Fabrication of semipolar free standing GaN Substrate” German-Japanese-Spanish Joint Workshop on Frontier Photonics and Electronic Materials and Devices 2015, , 2015.7.12-14, Kyoto, Japan(Oral)
  5. K. Tadatomo and N. Okada “Growth of Semipolar GaN Substrates by Hydride Vapor Phase Epitaxy on Patterned Sapphire Substrate” CLEO-PR 2015 BEXCO, , 2015.8.24-28, Busan, Korea(Oral)
  6. N. Okada, T. Yamamoto, H. Ihara, K. Yamane, and K. Tadatomo “Alternately-Double-Sided Growth of Low-Curvature GaN Templates on Sapphire Substrate by Hydride Vapor Phase Epitaxy” The 11th International Conference on Nitride Semiconductors (ICNS-11), TuGP18, 2015.8.30-9.4, Beijing International Convention Center(Poster)
  7. K. Sugimoto, Y. Denpo, N. Okada, and K. Tadatomo “Effect of superlattice on light output power for InGaN based light-emitting diodes grown on GaN underlying substrates with different dislocation density” The 11th International Conference on Nitride Semiconductors (ICNS-11), WeOP174, 2015.8.30-9.4, Beijing International Convention Center(Poster)
  8. Y. Yao, Y. Ishikawa, Y. Sugawara, M. Sudo, K. Tadatomo, and N. Okada “Revelation of dislocations in HVPE GaN single crystal by KOH etching with Na2O2 additive and cathodoluminescence mapping” The 16th conference on Defects-Recognition, Imaging and Physics in Semiconductors (DRIP XVI 2015), P09, 2015.9.6-10, Worldhotel Grand Dushulake Suzhou, Suzhou, China(Poster)
  9. T. Uchiyama, S. Takeuchi, T. Arauchi, Y. Hashimoto, K. Yamane, N. Okada, Y. Imai, S. Kimura, K. Tadatomo, and A. Sakai “Positional Dependence of Defect Distribution in Semipolar (20-21) HVPE-GaN Films Grown on (22-43) Patterned Sapphire Substrates” The 6th International Symposium on Growth of III-Nitrides (ISGN-6), We-B31, 2015.11.8-13, Act City Hamamatsu, Hamamatsu, Japan(Oral)
  10. T. Matsubara, K. Sugimoto, N. Okada, and K. Tadatomo “Transmission electron microscopy study on atomic arrangements at origin of threading dislocations at initial stages of GaN growth” The 6th International Symposium on Growth of III-Nitrides (ISGN-6), We-B36, 2015.11.8-13, Act City Hamamatsu, Hamamatsu, Japan(Oral)
  11. N. Okada, T. Nishihira, Y. Noguchi, T. Fujita, T. Yokogawa, and K. Tadatomo “Role of GaN channel layer in AlGaN/GaN HEMT for suppressing carbon diffusion from carbon-doped high-resistivity GaN layer” The 6th International Symposium on Growth of III-Nitrides (ISGN-6), We-A50, 2015.11.8-13, Act City Hamamatsu, Hamamatsu, Japan(Oral)

2014年

  1. Y. Denpo, Y. Mitsui, K. Yamane, N. Okada, and K. Tadatomo “Fabrication of InGaN Based Light-Emitting Diode Using Freestanding {20-21} GaN Substrate” Conference on LED and Its Industrial Application ’14 (LEDIA ’14), LEDp6-22, 2014.4.22-24, Pacifico Yokohama, Yokohama, Japan(Poster)
  2. N. Okada, M. Haziq, K. Yamane, Y. Yamada, and K. Tadatomo “Relationship between V-Pit Diameter and Potential Barrier Height in InGaN Based Light-Emitting Diodes” Conference on LED and Its Industrial Application ’14 (LEDIA ’14), LED4-14, 2014.4.22-24, Pacifico Yokohama, Yokohama, Japan(Oral)
  3. Y. Okamura, K. Nakao, N. Okada, K. Yamane, and K. Tadatomo “Evaluation of the Optical Polarization Properties in Semi-Polar {11-22} LEDs” Conference on LED and Its Industrial Application ’14 (LEDIA ’14), LED4-12, 2014.4.22-24, Pacifico Yokohama, Yokohama, Japan(Oral)
  4. N. Okada and K. Tadatomo “Impact of Light Extraction Efficiency on Performance of Nitride-Based Light-Emitting Diodes” International Union of Materials Research Societies The IUMRS International Conference in Asia 2014, (IUMRS2014), , 2014.8.24-29, Fukuoka University, Fukuoka, Japan(Oral)
  5. T. Fujita, Y. Noguchi, K. Yamane, N. Okada, and K. Tadatomo “Effect of resistivity of GaN buffer layer on performance of AlGaN / GaN High Electron Mobility Transistor” International Union of Materials Research Societies The IUMRS International Conference in Asia 2014, (IUMRS2014), C3-I27-006, 2014.8.24-30, Fukuoka, Japan(Oral)
  6. Y. Noguchi, T. Fujita, K. Yamane, N. Okada, and K. Tadatomo “Optimization of the growth condition of the AlGaN layer for the AlGaN/GaN HEMT structure” International Union of Materials Research Societies The IUMRS International Conference in Asia 2014, (IUMRS2014), C3-O25-007, 2014.8.24-30, Fukuoka, Japan(Oral)
  7. T. Tsukada, K. Yamane, N. Okada, K. Tadatomo, K. Tateishi, and K. Okamoto “Fabrication of InGaN based plasmonic LED with thin p-type layer” International Union of Materials Research Societies The IUMRS International Conference in Asia 2014, (IUMRS2014), C3-O25-010, 2014.8.24-30, Fukuoka, Japan(Oral)
  8. K. Nakao, T. Inagaki, T. Egami, Y. Okamura, K. Yamane, N. Okada, and K. Tadatomo “Impact of Structural Defects in Semipolar {11-22} GaN on Emission Intensity of Light-Emitting Diode” The International Workshop on Nitride Semiconductors (IWN2014), TuOP56, 2014.8.24-29, Wrocław Poland(Poster)
  9. K. Yamane, T. Yamamoto, T. Inagaki, N. Okada, and K. Tadatomo “Origin of Lattice Bowing of Freestanding GaN Substrates” The International Workshop on Nitride Semiconductors (IWN2014), MoGO7, 2014.8.24-29, Wrocław Poland(Oral)
  10. T. Arauchi, S. Takeuchi, Y. Hashimoto, Y. Nakamura, Y. Imai, K. Yamane, N. Okada, S. Kimura, K. Tadatomo, and A. Sakai “Crystalline Property Analysis of Semipolar (20-21) GaN on (22-43) Patterned Sapphire Substrate by X-ray Micro diffraction” The International Workshop on Nitride Semiconductors (IWN2014), WeBP49, 2014.8.24-29, Wrocław Poland(Poster)
  11. T. Uchiyama, S. Takeuchi, T. Arauchi, Y. Hashimoto, Y. Nakamura, K. Yamane, N. Okada, K. Tadatomo, and A. Sakai “Thickness and Growth Condition Dependence of Crystallinity in Semipolar (20-21) GaN Films Grown on (22-43) Patterned Sapphire Substrate” The International Workshop on Nitride Semiconductors (IWN2014), WeGP21, 2014.8.24-29, Wrocław Poland(Poster)
  12. K. Tadatomo K. Yamane, and N. Okada “Free standing GaN substrate grown on patterned sapphire substrate” PolarCoN Summer Seminar 2014, , 2014.9.24-26, Bensheim, Germany(Oral)

2013年

  1. T. Inagaki, K. Yamane, Y. Hashimoto, M. Koyama, N. Okada, K. Tadatomo, “Characterization of structural defects in {20-21} GaN Layers on {22-43} Patterned Sapphire Substrates”, JSAP-OSA Joint Symposia 2013, 17p-M6-7, Doshisya University, Kyoto, Japan, Sept. 16-18, 2013. (Oral presentation)
  2. N. Okada, T. Yamamoto, K. Yamane, K. Tadatomo, “Analysis of Surface Potential of Various Oriented GaN layers via Kelvin Force Microscopy”, JSAP-OSA Joint Symposia 2013, 19p-PM4-19, Doshisya University, Kyoto, Japan, Sept. 16-18, 2013. (Poster presentation)
  3. Y. Hashimoto, H. Furuya, M. Ueno, M. Koyama, K. Yamane, N. Okada, K. Tadatomo, “Improvement in semipolar GaN substrate grown by Hydride Vapor Phase Epitaxy”, JSAP-OSA Joint Symposia 2013, 16p-PM1-7, Doshisya University, Kyoto, Japan, Sept. 16-18, 2013. (Poster presentation)
  4. K. Yamane, Y. Hashimoto, N. Okada, K. Tadatomo “Fabrication of freestanding {20-21} GaN substrates by HVPE and LED application” 10th International Conference on Nitride Semiconductors (ICNS-10), A6.05, Gayload National Hotel and Convention Center, Washington DC Metropolitan Area, USA, August 25-30, 2013. (Oral presentation)
  5. N. Okada, A. Ishikawa, K. Yamane, K. Tadatomo, U. Jahn, H. T. Grahn “Generation of Defects by Glide m-planes in Semipolar GaN Layers” 10th International Conference on Nitride Semiconductors (ICNS-10), AP3.03, Gayload National Hotel and Convention Center, Washington DC Metropolitan Area, USA, August 25-30, 2013. (Poster presentation)
  6. Y. Hashimoto, H. Furuya, M. Ueno, K. Yamane, N. Okada, K. Tadatomo “Improvement in semipolar {11-22} GaN grown by Hydride Vapor Phase Epitaxy” 10th International Conference on Nitride Semiconductors (ICNS-10), AP3.06, Gayload National Hotel and Convention Center, Washington DC Metropolitan Area, USA, August 25-30, 2013. (Poster presentation)
  7. M. Ueno, Y. Hashimoto, K. Yamane, N. Okada, K. Tadatomo “Reduction of Defects in Semipolar {11-22} GaN Using SiNx Intermediate layer by Hydride Vapor Phase Epitaxy” 10th International Conference on Nitride Semiconductors (ICNS-10), AP3.12, Gayload National Hotel and Convention Center, Washington DC Metropolitan Area, USA, August 25-30, 2013. (Poster presentation)
  8. K. Nakao, K. Uchida, K. Yamane, N. Okada, K. Tadatomo “Improvement in Semipolar {11-22} Light-Emitting Diodes Using Combination of InGaN Underlying Layer and Hole Blocking Layer” 10th International Conference on Nitride Semiconductors (ICNS-10), BP3.30, Gayload National Hotel and Convention Center, Washington DC Metropolitan Area, USA, August 25-30, 2013. (Poster presentation)
  9. N. Okada, H. Furuya, Y. Hashimoto, K. Yamane, and K. Tadatomo, “Hydride vapor phase epitaxy of semipolar GaN using GaN templates grown on patterned sapphire substrates” (poster) E-MRS 2013 SPRING MEETING, L P1-1, 2013.5.28, Congress Center - Strasbourg, Strasbourg, France
  10. N. Okada, K. Uchida, K. Yamane, and K. Tadatomo, “{11-22} Semipolar Light Emitting Diodes Using Relaxed Thick InGaN Layers with Various In Compositions and Thickness” (oral) E-MRS 2013 SPRING MEETING, L 1-3, 2013.5.27, Congress Center - Strasbourg, Strasbourg, France
  11. N. Okada, S. Miyoshi, T. Kanda, R. Inomoto, K. Yamane, K. Tadatomo, T. Nishimiya, M. Hiramoto and S. Motoyama, “Effect of pillar-height on performance of light-emitting diode using patterned sapphire substrate with nano-structure” (poster) 5th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2013) P3112B-LN, 2013.1.28, Nagoya University, Nagoya, Japan

2012年

  1. H. Furuya, K. Yamane, N. Okada, and K. Tadatomo, “Fabrication of large freestanding semipolar {11-22} GaN films using r-plane patterned sapphire substrates” (poster) International Workshop on Nitride Semiconductors 2012 (IWN2012) TuP-GR-52, 2012.10.16, Sapporo Convention Center, Sapporo, Japan
  2. K. Yamane, M. Ueno, K. Uchida, H. Furuya, N. Okada, and K. Tadatomo, “Hydride Vapor Phase Epitaxy of Semipolar GaN on Patterned Sapphire Substrates” (poster) International Workshop on Nitride Semiconductors 2012 (IWN2012) MoP-GR-49, 2012.10.13, Sapporo Convention Center, Sapporo, Japan
  3. N. Okada, H. Oshita, K. Yamane, and K. Tadatomo, “Growth of semipolar {20-21} GaN layers on patterned sapphire substrate with wide-terrace” (poster) International Workshop on Nitride Semiconductors 2012 (IWN2012) MoP-GR-13, 2012.10.13, Sapporo Convention Center, Sapporo, Japan
  4. K. Uchida, S. Miyoshi, K. Yamane, N. Okada, and K. Tadatomo, “Evaluation of {11-22} semipolar multiple quantum wells using thick InGaN layers with various In compositions” (poster) International Workshop on Nitride Semiconductors 2012 (IWN2012) MoP-GR-10, 2012.10.13, Sapporo Convention Center, Sapporo, Japan
  5. S. Miyoshi, R. Inomoto, N. Okada, and K. Tadatomo, "InGaN-based high-efficiency light-emitting diodes on patterned sapphire substrate with nano-structure by nanoimprint lithography and inductive-coupled-plasma reactive ion etching"（oral）Asia Pacific Conference on Plasma Science and Technology, and Symposium on Plasma Science for Materials（APCPST&SPSM 2012）4G-O04, 2012.10.05, Kyoto University ROHM Plaza, Kyoto, Japan
  6. K. Yamane, M. Ueno, H. Furuya, N. Okada, K. Tadatomo “Behavior of Hydride Vapor Phase Epitaxy-Grown GaN Layers on Sapphire Substrates in Successful Natural Stress-Induced Separation” 39th International Symposium on Compound Semiconductors, University of California, California, USA, Aug. 26-30, 2012. (Mo-P.10)
  7. N. Okada, M. Haziq, Y. Hirota, K. Uchida, Y. Fukuda, S. Miyoshi, K. Yamane, and K. Tadatomo, “Improvement in performance of light-emitting diodes fabricated on semipolar {11-22} GaN template using thick InGaN layers” (oral) International Symposium on Semiconductor Light Emitting Devices 2012 (ISSLED2012), O4A02, 2012.7.24, Berlin, Germany
  8. N. Okada, M. Takami, and K. Tadatomo, “Optical properties of multiple quantum wells on GaN layers composed of {10-11} and m-facets structure” (oral) The 4th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2012) 5p-B02OB, 2012.3.5, Chubu Univ., Aichi, Japan

2011年

  1. N. Okada, K. Uchida, S. Miyoshi, and K. Tadatomo, “Green light-emitting diodes fabricated on semipolar (11-22) GaN on r-plane patterned sapphire substrate” (oral) The 9th International Conference on Nitride Semiconductors (ICNS-9) F6.4, 2009.7.13, SECC, Glasgow, UK
  2. H. Furuya, N. Okada, and K. Tadatomo, “Growth and reduction of dislocation density of {11-22} GaN on shallow etched r-plane patterned sapphire substrates” (oral) The 9th International Conference on Nitride Semiconductors (ICNS-9) B6.5, 2009.7.12, SECC, Glasgow, UK
  3. T. Kuwahara, N. Kuwano, A. Kurisu, N. Okada, K. Tadatomo, “Behavior of misfit dislocations in semipolar InGaN/GaN grown by MOVPE” (poster) The 9th International Conference on Nitride Semiconductors (ICNS-9) PB1.36, 2009.7.11, SECC, Glasgow, UK
  4. N. Okada, S. Miyoshi, K. Tadatomo, T. Arimura, Y. Kobayashi, Y. Yano, and K. Matsumoto, "Improvement of performance of InGaN/GaN light-emitting diodes fabricated with slightly added impurity gas into active region" (oral) 5th Asia-Pacific Workshop on Widegap Semiconductors (APWS-2011) We-D5, 2011.5.25, Toba Hotel International, Toba, Mie, Japan

2010年

  1. H. Oshita, A. Krisu, Y. Abe, N. Okada, and K. Tadatomo, "Selective area growth of semipolar and nonpolar GaN from sapphire sidewall on patterned sapphire substrate by controlling generation of nucleation using low-temperature GaN buffer layer" (oral) International Workshop on Nitride Semiconductors 2010 (IWN2010) ThA3.8, 2010.9.23, Tampa Marriott Waterside Hotel & Marina Grand Ballroom, Tampa, USA
  2. A.Uchida, Y. Abe, N. Okada, Tadatomo, K. Ibi, and Y. Watabe, "Dependence of refractive index of thick mask layers on light-extraction efficiency of InGaN Light-Emitting Diodes" International Workshop on Nitride Semiconductors 2010 (IWN2010) HP1.45, 2010.9.21, Tampa Marriott Waterside Hotel & Marina Grand Ballroom, Tampa, USA
  3. M. Takami, A. Kurisu, Y. Abe, N. Okada, K. Tadatomo, M. Umehara, T. Ihara, S. Tubokura, and W. Hujita, "Growth of semipolar {10-11} GaN from c-plane sapphire sidewall of patterned n-plane sapphire substrate and multicolor emission from InGaN quantum wells" International Workshop on Nitride Semiconductors 2010 (IWN2010) AP1.4, 2010.9.20, Tampa Marriott Waterside Hotel & Marina Grand Ballroom, Tampa, USA

2009年

  1. T. Shinagawa, Y. Abe, H. Matsumoto, B. Li, K. Murakami, N. Okada, K.Tadatomo, M. Kannaka, and H. Fujii, "Light-emitting diodes fabricated on nanopatterned sapphire substrates by thermal lithography" The 8th International Conference on Nitride Semiconductors (ICNS-8) ThP67, 2009.10.22
  2. A. Kurisu, K. Murakami, Y. Abe, N. Okada, K. Tadatomo, “Epitaxial lateral overgrowth of semipolar (11-22) GaN from c-plane sapphire sidewall of patterned r-plane sapphire substrate without SiO2 mask” (oral) The 8th International Conference on Nitride Semiconductors (ICNS-8), Z5, 2009.10.21
  3. Y. Kawashima, K. Murakami, B. Li, H. Matsumoto, N. Okada, and K. Tadatomo, “Growth mechanism of nonpolar m-GaN on patterned a-plane sapphire substrate” (oral) The 8th International Conference on Nitride Semiconductor (ICNS 8), II3, 2009.10.22
  4. D. Fujita, T. Miyatake, T. Shinagawa, Y. Abe, K. Murakami, B. Li, H. Matsumoto, N. Okada, and K. Tadatomo, “Fabrication of InGaN template using (11-22) facet growth and mass transport” The 8th International Conference on Nitride Semiconductors (ICNS-8), TP19, 2009.10.20

2008年

  1. N. Okada, Y. Kawashima, and K. Tadatomo, “Direct growth of m-plane GaN on grooved-patterned a-plane sapphire substrate with SiO2 mask” (oral) International Workshop on Nitride Semiconductors 2008 (IWN2008), Th1-E4, 2008.10.9
  2. N. Okada, F. Ishida, Y. Mitsui, K. Tadatomo, H. Mangyou, Y. Kobayashi, H. Ono, K. Ikenaga, Y. Yano, and K. Matsumoto, “Deterioration of performance of light emitting diodes fabricated by using NH3 containing H2O” (oral) International Workshop on Nitride Semiconductors 2008 (IWN2008), We6-B4, 2008.10.8
  3. T. Murata, F. Ishida, S. Kono, Y. Mitsui, N. Okada, K. Tadatomo, H.-C. Chang, and K. Watanabe, “High Power InGaN Light Emitting Diodes Fabricated on Random –cone Patterned Sapphire Substrate” International Workshop on Nitride Semiconductors 2008 (IWN2008), Tu6-P36, 2008.10.7

2007年

  1. K. Hoshino, T. Murata, M. Araki, and K. Tadatomo, “Fabrication of GaN-based light emitting diodes using direct heteroepitaxial lateral overgrowth on patterned sapphire substrates with thick SiO2 masks” 34th ISCS 2007 Kyoto, Japan, October, 2007
  2. Kazuyuki Tadatomo, Fumio Ishida, Kazumasa Yoshimura, Katsuyuki Hoshino “Improved Light Extraction Efficiency of GaN-Based Light Emitting Diodes by Using Needle-Shape Indium Uin Oxide p-Contact” 7th ICNS 2007 Las Vegas, Nevada, USA, September, 2007
  3. Katsuyuki Hoshino, Masahiro Araki, kazuyuki Tadatomo “Selective Area Growth of GaN on Patterned Sapphire Substrates by Metalorganic Vapor Phase Epitaxy for Highly Efficient UV Light Emitting Diodes” 7th ICNS 2007 Las Vegas, Nevada, USA, September, 2007
  4. Akiko Nakamura, Naoto Yanagita, Toru Murata, Katsuyuki Hoshino, Kazuyuki Tadatomo “Effect of Sapphire Structure Misorientation on the GaN-Based Light Emitting Diodes Grown by Metalorganic Vapor Phase Epitaxy” 7th ICNS 2007 Las Vegas, Nevada, USA, September, 2007
  5. Soichiro Kono, Masahiro Hiraoka, Kazumasa Yoshimura, Katsuyuki Hoshino, and Kazuyuki Tadatomo “Influence of the pattern shape on the EL property of the InGaN-LEDs grown on patterned sapphire substrates” 26thElectronic Materials Symposium Shiga, Japan, July, 2007
  6. Akiko Nakamura, Toru Murata, Naoto Yanagita, Katsuyuki Hoshino, and Kazuyuki Tadatomo “Influence of misorientation angle of (0001) c-plane sapphire substrate on InGaN grown by metalorganic vapor phase epitaxy” 26thElectronic Materials Symposium Shiga, Japan, July, 2007
  7. Katsuyuki Hoshino, Naoto Yanagita, and Kazuyuki Tadatomo “Misorientation-angle dependence of GaN layers grown on c-plane sapphire substrates by metalorganic vapor phase epitaxy” 26thElectronic Materials Symposium Shiga, Japan, July, 2007

2006年

  1. K. Hoshino, N. Yanagita, M. Araki, and K. Tadatomo, “Effect of low-temperature GaN buffer layer on the crystalline quality of subsequent GaN layers grown by MOVPE”, ICMOVPE XIII Miyazaki, Japan, May, 2006
  2. M. Araki, K. Hoshino, and K. Tadatomo, “Direct Growth of A-Plane GaN on r-Plane Sapphire Substrate by Metalorganic Vaper Phase Epitaxy” IWN 2006 Kyoto, Japan, October, 2006
  3. M. Araki, N. Mochimizo, K. Hoshino, and K. Tadatomo, “Two step growth of a-plane GaN on r-plane Sapphire Substrate without a low-temperature buffer layer by MOVPE” MRS 2006 Fall Meeting Boston, USA, November, 2006
  4. K. Hoshino, N. Yanagita, and K. Tadatomo, “Effects of Sapphire Substrate Misorientation on Metalorganic Vapor Phase Epitaxy Growth of GaN”, MRS 2006 Fall Meeting Boston, USA, November, 2006
  5. K. Tadatomo, O. Shimoike, H. Noda, M. Hiraoka, M. Yoshimura, and K. Hoshino, “The PL Mapping Analysis Under the Condition of Selective Excitation on the Epitaxial Wafer with InGaN-LED Structure”, MRS 2006 Fall Meeting Boston, USA, November, 2006
  6. K. Yamaguchi, T. Ishiguro, Y. Toda, S. Adachi, K. Hoshino, and K. Tadatomo “Time-Resolved Four-Wave Mixing Studies of Excitons in GaN” IWN2006 Kyoto, Japan, Oct., 2006
  7. K. Hoshino, N. Yanagita, and K. Tadatomo “The correlation between the formation of low-temperature-grown GaN buffer layer and the crystalline quality of subsequently grown GaN epitaxial layer” EMS-25 Izu-Nagaoka, Japan, Jul., 2006