招待講演
- Narihito Okada, Keisuke Yamane, Tohoru Matsubara, Shin Goubara, Hiroshi Ihara, Kota Yukizane, Tatsuya Ezak1i, Satoru Fujimoto, Ryo Inomoto, Kazuyuki Tadatomo “HVPE-grown GaN substrate with overall low dislocation density and relation between lattice bowing and defects”, 12th International Conference on Nitride Semiconductors (ICNS-12), Strasbourg Convention and Exhibition Centre, Strasbourg, France, July 23-28, 2017. (July 24, 2017) A 1.1 (Invited oral presentation)
- K. Tadatomo and N. Okada “Growth of Semipolar GaN Substrates by Hydride Vapor Phase Epitaxy on Patterned Sapphire Substrate” CLEO-PR 2015 BEXCO, Busan, Korea 24 Aug 2015 - 28 Aug 2015. (Invited oral presentation)
- K. Tadatomo, N. Okada, and K. Yamane “Fabrication of semipolar free standing GaN Substrate”, German-Japanese-Spanish Joint Workshop on Frontier Photonics and Electronic Materials and Devices 2015, Kyoto, Japan, July 12-14, 2015. (July 13, 2015) Abstracts p. 21. (Invited oral presentation)
- K. Tadatomo K. Yamane, N. Okada, “Free standing GaN substrate grown on patterned sapphire substrate”, PolarCoN Summer Seminar 2014, Bensheim, Germany, September 24-26, 2014. (Invited oral presentation)
- K. Tadatomo, N. Okada, K. Yamane, H. Furuya, Y. Hashimoto, “Advancement in Future Applications with III-Nitrides by Fusion Technology between Epitaxy and Processing”, International Workshop on Ultra-Precision Processing for III Nitride Semiconductor and Devices (WUPP for Nitride), Santa Barbara, California, USA. Oct. 16-18, 2013. (Invited oral presentation)
- Y. Hashimoto, M. Koyama, T. Inagaki, K. Yamane, N. Okada, K. Tadatomo, “Evaluation of Heteroepitaxially Grown Semipolar {20-21}GaN on Patterned Sapphire Substrate” International Symposium on Optomechatronic Technologies 2013 (ISOT2013), Ramada Plaza Jeju Hotel, Jeju Island, Korea, Oct. 28-30, 2013. (Invited oral Presentation)
- N. Okada, H. Furuya, Y. Hashimoto, K. Yamane, K. Tadatomo, “Hydride vapor phase epitaxy of semipolar GaN using GaN templates grown on patterned sapphire substrates”, 8th International Workshop on Bulk Nitride Semiconductors (IWBNS-VIII), Kloster Seeon, Bavaria, Germany, Sept. 30-Oct. 5, 2013. (Invited oral presentation)
- K. Yamane, Y. Hashimoto, N. Okada, K. Tadatomo, “Improvement on Flatness of GaN Layer and Utilization Efficiency of Ga Source by Flow Modulation on Hydride Vapor Phase Epitaxy”, 8th International Workshop on Bulk Nitride Semiconductors (IWBNS-VIII), Kloster Seeon, Bavaria, Germany, Sept. 30-Oct. 5, 2013. (Invited oral presentation)
- N. Okada, K. Yamane, K. Tadatomo, “Progress in semipolar GaN on patterned sapphire substrates by HVPE”, JSAP-OSA Joint Symposia 2013, 17p-M6-2, Doshisya University, Kyoto, Japan, Sept. 16-18, 2013. (Invited oral presentation)
- K. Tadatomo, K. Yamane, N. Okada, H. Furuya, and Y. Hashimoto “Semipolar GaN substrate grown on patterned sapphire substrate by hydride vapor phase epitaxy” DPG Spring Meeting Deutschen Physikalischen Gesellschaft (Germany, Regensburg: Regensburug University) 2013.3.10
- K. Tadatomo, N. Okada, K. Yamane, H. Furuya, and Y. Hashimoto “Semipolar GaN Growth on Patterned Sapphire Substrate by Hydride Vapor Phase Epitaxy” SPIE, Photonics West 2013 SPIE (the international society for optics and photonics) Paper No.8625-2 (USA, California: Mscone Center) 2013.2.2
- K. Tadatomo, N. Okada, K. Yamane, H. Furuya “Growth of free standing Semipolar GaN on Patterned Sapphire Substrates by Hydride Vapor Phase Epitaxy” Intensive Discussion on Crystal Growth of Nitride Semiconductors (Sendai:Tohoku University) 2012.10.22
- K. Tadatomo, N. Okada, K. Yamane, H. Furuya “Growth of Semipolar GaN on Patterned Sapphire Substrates by Hydride Vapor Phase Epitaxy” 2012 German-Japan-Spanish Joint Workshop on Frontier Photonic and Electronic Materials and Devices(Germany, Berlin:Japanese-German Center Berlin)2012.7.21
- 只友一行、岡田成仁、山根啓輔 「ハイドライド気相成長法による非極性面GaNの厚膜成長」第137回 結晶工学分科会研究会応用物理学会(京都市:京都テルサ)2012/6/15
- 岡田成仁「非極性面LEDの現状と課題」固体光源分科会、視覚・色・光環境分科会 公開研究会「照明用LEDの開発と応用の最新技術動向」(2013.1.17) 日本大学理工学部,東京都
- 岡田成仁, 上野元久, 内田健充,古家大士, 山根啓輔, 只友一行:「ハイドライド気相成長による非極性面GaNの低転位化メカニズム」(講演奨励賞受賞記念講演)平成24年秋季第73回応用物理学会関係連合学術講演会, 12p-H9-8 (2012.9.12) 愛媛大学,愛媛県
- 只友一行, 岡田成仁, 山根啓輔:「ハイドライド気相成長法による非極性面GaNの厚膜成長」第137回結晶工学分科会研究会 (2012.6.15), 京都テルサ,京都.
- 只友一行, 岡田成仁「サファイア加工基板を用いた非極性面GaN成長とその成長機構」第146回KASTECセミナー (2010.12.16) 九州大学 産学連携センター, 福岡県
- 只友一行,岡田成仁「窒化物半導体材料とプラズマ加工」(独)日本学術振興会プラズマ材料科学第153委員会 第99回研究会,(2010.11.19) 福山市,広島県
- 岡田成仁,大下弘康,高見成希,栗栖彰宏,只友一行: 「サファイア加工基板を用いた非極性面GaN成長とその成長機構」窒化物結晶成長講演会2010,(2010.5.15) 三重大学,三重県
- 只友一行, 岡田成仁「青色~紫外発光素子材料の窒化ガリウム(GaN)結晶の成長プロセス」第138回KASTECセミナー(2009.12.18),九州大学 産学連携センター, 福岡県
- 只友一行, 岡田成仁, 川嶋佑治, 栗栖彰宏, 南雅博, 村上一馬, 河野創一郎「サファイア加工基板を使った非極性面GaNのMOVPE成長」日本学術振興会161委員会/162委員会合同研究会 (2009.3.13-14) 鳥羽シーサイドホテル, 三重県
- 只友一行, 岡田成仁「サファイア基板上への新しい結晶成長技術 -照明用発光ダイオードの高効率化への取り組み-」応用電子物性分科会研究会(2009.11.6) 機械振興会館,東京都
- H. Mangyou, Y. Kobayashi, H. Ono, K. Ikenaga, Y. Yano, K. Matsumoto, N. Okada, F. Ishida, Y. Mitsui, K. Tadatomo, “Effect of moisture contamination in NH3 on the light output of InGaN LED” 15th National conference on Compound Semiconductor Materials, Microwave Devices and Optoelectronic Devices, Guangzhou China (Nov. 2008)